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30ETU12 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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30ETU12 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Ultrafast Rectifier Diode 30ETU12 www.iscsemi.com 1 FEATURES · Ultrafast recovery · Compliant to RoHS · High junction temperature APPLICATIONS · SMPS · Inverters · Industrial power supplies and UPS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Peak Repetitive Reverse Voltage DC Blocking Voltage 1200 V IF(AV) Average Rectified Forward Current (Rated VR),TC=116℃ 30 A IFRM Peak Rectified Forward Current 100 A IFSM Nonrepetitive Peak Surge Current 280 A TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.8 ℃ /W |
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