ECF10N20

BV

Drain – Source Breakdown Voltage

ID = 10mA

(ECF10)20

200

V

BV

Gate – Source Breakdown Voltage

VDS = 0

IG=+100uA

+14

V

V

Gate - Source Cut-O Voltage

VDS = 10V

ID = 100mA

0.15

1.5

V

V

*

Drain - Source Saturation Voltage

VGD = 0

ID = 8A

12

V

I

Drain - Source Cut - O Current

VDS = 160V

(ECF10)16

VDS =200V

(ECF10)20

Yfs*

Forward Transfer Admittance

VDS = 10V

ID = 3A

0.7

2

S

Characteristic

Test Conditions

MIN

TYP

MAX

UNIT

(T = 25°C unless otherwise stated)

C

STATIC CHARACTERISTICS

(T = 25°C unless otherwise stated)

C

DYNAMIC CHARACTERISTICS

-

-

VGS = -10V

mA

10

10

* Pulse Test: Pulse Width = 300s, Duty Cycle ≤ 2%

C

Input Capacitance

500

700

C

Output Capacitance

300

300

pF

C

Reverse Transfer Capacitance

10

25

t

Turn-on Time

100

120

t

Turn-o Time

50

60

80

Characteristic

Test Conditions

N-Channel

P-Channel

UNIT

VDS= 10V

f = 1MHz

VDS= 20V

ID = 7A

ns

DSX

GS(OFF)

GSS

DSX

DS(SAT)

iss

oss

rss

on

o

Tel: +44 (0)1702 543500

Fax: +44 (0)1702 543700

Rev:3.1

Exicon products are available at www.profusionplc.com

2

www.exicon.info