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MSC81400M Datasheet(PDF) 1 Page - STMicroelectronics

Part # MSC81400M
Description  RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
PDF  3 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

MSC81400M Datasheet(HTML) 1 Page - STMicroelectronics

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October 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (S038)
hermetically sealed
.
REFRACTORY\GOLD METALLIZATION
.
RUGGEDIZED VSWR 25:1
.
INTERNAL INPUT/OUTPUT MATCHING
.
LOW THERMAL RESISTANCE
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 400 W MIN. WITH 6.5 dB GAIN
DESCRIPTION
The MSC81400M "Super Power" transistor is a
high peak pulse power device specifically de-
signed for DME/TACAN avionics applications.
This device is capable of withstanding a minimum
25:1 load mismatch condition at any phase angle
under full rated conditions.
The MSC81400M is housed in the unique BIG-
PAC™ hermetic metal/ceramic package with inter-
nal input/output matching structures.
PIN CONNECTION
BRANDING
81400M
ORDER CODE
MSC81400M
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤ 80˚C)
1000
W
IC
Device Current*
28
A
VCC
Collector-Supply Voltage*
55
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
− 65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
0.12
°C/W
*Applies only to rated RF amplifier operation
MSC81400M
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/3


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