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IDB30E60 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IDB30E60
Description  Fast Recovery Diode
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IDB30E60 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  IDB30E60 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IDB30E60 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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Fast Recovery Diode
IDB30E60
www.iscsemi.com
1
FEATURES
· Fast Recovery
· Soft Switching
· Low Reverse Recovery Charge
APPLICATIONS
· Switching power supply
· Power switching circuits
ABSOLUTE MAXIMUM RATINGS(TJ=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Repetitive peak reverse voltage
600
V
IF
Continuous forward current
TC=25℃
52.3
A
TC=90℃
34.9
A
IFSM
Surge non repetitive forward current
sine halfwave,tp=10ms
117
A
IFRM
Maximum repetitive forward current
tp limited by tjmax, D = 0.5
81
A
TJ
Junction Temperature
-40~175
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.05
℃
/W
ELECTRICAL CHARACTERISTICS(TJ = 25 °C unless otherwise specified)
SYMBO
L
PARAMETER
CONDITIONS
MIN TYP MAX UNI
T
VF
Maximum Instantaneous Forward Voltage
IF= 30A
--
--
2.0
V
IR
Maximum Instantaneous Reverse Current
VR= VRWM
--
--
50
μA


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