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MBRF10200CT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBRF10200CT Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Schottky Rectifiers Diode MBRF10200CT www.iscsemi.com 1 FEATURES · High surge capacity · High current capacity · Low forward voltage drop APPLICATIONS · Polarity Protection · Switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak repetitive Reverse voltage 200 V VRMS RMS Voltage 200 V IF(AV) Average Forward Rectified Current 10 A IFSM Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimosed on Rated Load 110 A TJ Junction temperature 175 ℃ Tstg storage temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance, junction-to-case 7 ℃ /W ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF Forward voltage IF= 5A -- 0.91 V IR Reverse leakage current VR = 200V -- 100 uA |
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