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MSC82306 Datasheet(PDF) 1 Page - STMicroelectronics

Part # MSC82306
Description  RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
PDF  4 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

MSC82306 Datasheet(HTML) 1 Page - STMicroelectronics

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PRELIMINARY DATA
October 1992
GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermetically sealed
.
REFRACTORY\GOLD METALLIZATION
.
VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
.
HERMETIC STRIPAC® PACKAGE
.
POUT
= 5.5 W MIN. WITH 9.6 dB GAIN
DESCRIPTION
The MSC82306 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overaly die geometry. This device
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82306 was designed for Class C Am-
plifier/Oscillator applications in the 1.5 - 2.3 GHz
frequency range.
PIN CONNECTION
BRANDING
82306
ORDER CODE
MSC82306
ABSOLUTE MAXIMUM RATINGS (Tcase
= 25°C)
Symbol
Parameter
Value
Uni t
PDISS
Power Dissipation*
(TC
≤ 50°C)
16.7
W
IC
Device Current*
900
mA
VCC
Collector-Supply Voltage*
26
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
− 65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
9.0
°C/W
*Applies only to rated RF amplifier operation
MSC82306
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/4


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