PRELIMINARY DATA

October 1992

GENERAL PURPOSE AMPLIFIER APPLICATIONS

RF & MICROWAVE TRANSISTORS

.250 2LFL (S010)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

VSWR CAPABILITY 20:1 @ RATED

CONDITIONS

.

HERMETIC STRIPAC® PACKAGE

.

DESCRIPTION

The MSC82307 is a common base hermetically

sealed silicon NPN microwave power transistor

utilizing a rugged overlay die geometry. This device

is capable of withstanding 20:1 load VSWR at

any phase angle under rated conditions.

The MSC82307 was designed for Class C ampli-

fier/oscillator applications in the 1.5 - 2.3 GHz fre-

quency range.

PIN CONNECTION

BRANDING

82307

ORDER CODE

MSC82307

Symbol

Parameter

Value

Unit

Power Dissipation*

≤ 50˚C)

21.4

W

Device Current*

1.2

A

Collector-Supply Voltage*

26

V

Junction Temperature

200

°C

Storage Temperature

− 65 to +200

°C

Junction-Case Thermal Resistance*

7.0

°C/W

*Applies only to rated RF amplifier operation

MSC82307

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/3