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MSC83301 Datasheet(PDF) 1 Page - STMicroelectronics

Part # MSC83301
Description  RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
PDF  5 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

MSC83301 Datasheet(HTML) 1 Page - STMicroelectronics

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September 2, 1994
GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 250 2LFL (S010)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
VSWR CAPABILITY
∞:1 @ RATED
CONDITIONS
.
HERMETIC STRIPAC® PACKAGE
.
POUT
= 1.0 W MIN. WITH 7.0 dB GAIN
@3.0 GHz
DESCRIPTION
The MSC83301 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing an overlay, emitter site ballasted geome-
try with a refractory gold metallization system.
This device is capable of withstanding an infinite
load VSWR at any phase angle under rated con-
ditions. The MSC83301 is designed for Class C
amplifier/oscillator applications in the 1.0 - 3.0
GHz frequency range.
PIN CONNECTION
BRANDING
83301
ORDER CODE
MSC83301
ABSOLUTE MAXIMUM RATINGS (Tcase
= 25°C)
Symbol
Parameter
Value
Uni t
PDISS
Power Dissipation*
(TC
≤ 50°C)
6.0
W
IC
Device Current*
200
mA
VCC
Collector-Supply Voltage*
30
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
− 65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
25
°C/W
*Applies only to rated RF amplifier operation
MSC83301
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/5


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