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MSC83305 Datasheet(PDF) 1 Page - STMicroelectronics

Part # MSC83305
Description  RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
PDF  5 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

MSC83305 Datasheet(HTML) 1 Page - STMicroelectronics

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October 1992
GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER BALLASTED
.
VSWR CAPABILITY
∞:1 @ RATED
CONDITIONS
.
HERMETIC STRIPAC® PACKAGE
.
POUT
= 4.5 W MIN. WITH 4.5 dB GAIN
@ 3.0 GHz
DESCRIPTION
The MSC83305 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing an emitter site ballasted geometry with a
refractory gold metallization system. This device
is capable of withstanding an infinite load VSWR
at any phase angle under rated conditions. The
MSC83305 was designed for Class C amplifier/os-
cillator applications in the 1.0 - 3.0 GHz frequency
range.
PIN CONNECTION
BRANDING
83305
ORDER CODE
MSC83305
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤ 50˚C)
17.6
W
IC
Device Current*
700
mA
VCC
Collector-Supply Voltage*
30
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
− 65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
8.5
°C/W
*Applies only to rated RF amplifier operation
MSC83305
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/5


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