Table 4. Electrical characteristics at VCC+ = +3.3 V with VCC- = 0 V, Vicm = VCC/2, T = 25 °C, and RL = 10 kΩ connected to

VCC/2 (unless otherwise specified).

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

DC performance

Vio

Offset voltage

TSV52xA, T = 25 °C

600

µV

TSV52xA, -40 °C < T < 125 °C

2400

TSV52x, T = 25 °C

1.3

mV

TSV52x, -40 °C < T < 125 °C

3.1

ΔVio/ΔT

Input offset voltage drift

-40 °C < T < 125 °C

3

18

µV/°C

ΔVio

Long term input offset voltage drift (2)

T = 25 °C

0.3

μVmontℎ

Iio

Input offset current (3) (Vout = VCC/2)

T = 25 °C

1

10

pA

-40 °C < T < 125 °C

1

100

Iib

Input bias current (3) (Vout = VCC/2)

T = 25 °C

1

10

-40 °C < T < 125 °C

1

100

CMR

Common-mode rejection ratio 20 log (ΔVic/ΔVio)

Vic = -0.1 V to VCC + 0.1 V, Vout = VCC/2,

RL = 1 MΩ

T = 25 °C

51

73

dB

-40 °C < T < 125 °C

47

Avd

Large signal voltage gain Vout = 0.5 V to

(VCC -0.5 V), RL = 1 MΩ

T = 25 °C

91

106

-40 °C < T < 125 °C

63

VOH

High level output voltage

T = 25 °C

3

35

mV

-40 °C < T < 125 °C

50

VOL

Low level output voltage

T = 25 °C

7

35

-40 °C < T < 125 °C

50

Iout

Isink

Vout = VCC, T = 25 °C

20

31

mA

Vout = VCC, -40 °C < T < 125 °C

17

Isource

Vout = 0 V, T = 25 °C

19

27

Vout = 0 V, -40 °C < T < 125 °C

17

ICC

Supply current (per channel) Vout = VCC/2,

RL > 1 MΩ

T = 25 °C

32

55

µA

-40 °C < T < 125 °C

32

55

AC performance

GBP

Gain bandwidth product

RL = 10 kΩ, CL = 100 pF

0.64

1

MHz

Fu

Unity gain frequency

900

kHz

ɸm

Phase margin

55

degrees

Gm

Gain margin

7

dB

SR

Slew rate

RL = 10 kΩ, CL = 100 pF,

Vout = 0.5 V to VCC -0.5 V

0.75

V/µs

en

Equivalent input noise voltage

f = 1 kHz

60

nVHz

f = 10 kHz

42

THD+N

Total harmonic distortion + noise

Follower configuration, fin = 1

kHz, RL = 100 kΩ, Vicm = VCC/2,

BW = 22 kHz, Vout = 1 Vpp

0.003

%

TSV521, TSV522, TSV524,TSV521A, TSV522A, TSV524A

Electrical characteristics

DS8862 - Rev 4

page 5/29