CHA2159

RoHS COMPLIANT

Ref. : DSCHA21597262 - 19 Sep 07

1/6

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

55-65GHz Low Noise / Medium Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2159 is a four - stage low noise and

medium power amplifier. It is designed for a

wide range of applications, from military to

commercial

communication

systems. The

backside of the chip is both RF and DC

grounded. This simplifies the assembly process.

The circuit is manufactured with a pHEMT

process, 0.15µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is supplied in chip form.

Main Features

■ 4.0 dB noise figure

■ 20 dB gain

■ 14 dBm output power (-1dB gain comp.)

■ DC power consumption, 115mA @ 3.5V

■ Chip size: 2.35 x 1.11 x 0.10 mm

-14

-12

-10

-8

-6

-4

-2

0

2

4

6

8

10

12

14

16

18

20

22

55

60

65

Frequency (GHz)

dBS11

dBS21

dBS22

NF Typ.

Typical on Wafer Measurements

Main Characteristics

Tamb = +25°C, Vd = 3.5V

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

55

65

GHz

G

Small signal gain

18

20

dB

NF

Noise figure

4.0

4.8

dB

P1dB

Output power at 1dB gain compression

13

14

dBm

Id

Bias current

115

150

mA

ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!