CHA2394

RoHS COMPLIANT

Ref. : DSCHA23946354 - 20 Dec 06

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

36-40GHz Very Low Noise High Gain Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2394 is a three-stage monolithic

low noise amplifier. It is designed for a wide

range

of

applications,

from

military

to

commercial communication systems.

The circuit is manufactured with a HEMT

process : 0.25µm gate length, via holes

through the substrate, air bridges and

electron beam gate lithography.

It is available in chip form.

Main Features

■ 2.5dB Noise Figure

■ 21dB gain

■ ±1.5dB gain flatness

■ Low DC power consumption, 60mA @

3.5V

■ Chip size : 1.72 X 1.08 X 0.10 mm

Vgs1&2

Vgs3

Vds

IN

OUT

Vds

Typical on wafer measurements :

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

36

40

GHz

G

Small signal gain

18

21

dB

P1dB

Output power at 1dB gain compression

8

12

dBm

NF

Noise figure

2.5

3.0

dB

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

10

12

14

16

18

20

22

30 31 32 33 34 35 36 37 38 39 40

Frequency (GHz)

1

1,5

2

2,5

3

3,5

4