PD55035 datasheet(1/14 Pages) STMICROELECTRONICS

Part #	PD55035

Description	RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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March, 21 2003

PD55035

PD55035S

RF POWER TRANSISTORS

The LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 35 W with 16.9 dB gain @ 500 MHz /

12.5 V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD55035 is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 12 V in common source mode at frequencies of

up to 1 GHz. PD55035 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS

technology mounted in the first true SMD plastic

RF power package, PowerSO-10RF. PD55035’s

superior linearity performance makes it an ideal

solution for car mobile radio.

The PowerSO-10 plastic package, designed to

offer high reliability,

is the

first ST JEDEC

approved, high power SMD package. It has been

specially

optimized for

RF needs and offers

excellent RF performances and ease of assembly.

PowerSO-10RF

(formed lead)

ORDER CODE

PD55035

BRANDING

PD55035

PowerSO-10RF

(straight lead)

ORDER CODE

PD55035S

BRANDING

PD55035S

ABSOLUTE MAXIMUM RATINGS (TCASE = 25

°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

± 20

V

ID

Drain Current

7

A

PDISS

Power Dissipation (@ Tc = 70°C)

95

W

Tj

Max. Operating Junction Temperature

165

°C

TSTG

Storage Temperature

-65 to +150

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

1.0

°C/W

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

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