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TARGET DATA

Jun 2000

PD57018

PD57018S

RF POWER TRANSISTORS

The LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 18 W with 14 dB gain @ 960 MHz / 28V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD57018 is a common source N-Channel, en-

hancement-mode, lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 28V in common source mode at frequencies of

up to 1GHz. PD57018 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS tech-

nology mounted in the first true SMD plastic RF

power package, PowerSO-10RF. PD57018’s su-

perior linearity performance makes it an ideal so-

lution for base station applications.

The PowerSO-10 plastic package, designed to of-

fer high reliability, is the first ST JEDEC approved,

high power SMD package. It has been specially

optimized for RF needs and offers excellent RF

performances and ease of assembly.

PowerSO-10RF

(Formed Lead)

ORDER CODE

BRANDING

PowerSO-10RF

(Straight Lead)

ORDER CODE

BRANDING

PD57018

XPD57018

PD57018S

XPD57018S

Symbol

Parameter

Value

Unit

Drain-Source Voltage

65

V

Gate-Source Voltage

±20

V

Drain Current

2.5

A

31.7

W

Max. Operating Junction Temperature

165

Storage Temperature

-65 to 175

Junction-Case Thermal Resistance

3.0