PD57070 datasheet(1/13 Pages) STMICROELECTRONICS

Part #	PD57070

Description	RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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March, 21 2003

PD57070

PD57070S

RF POWER TRANSISTORS

The LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD57070 is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 28 V in common source mode at frequencies of

up to 1 GHz. PD57070 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS

technology mounted in the first true SMD plastic RF

power

package,

PowerSO-10RF.

PD57070’s

superior linearity performance makes it an ideal

solution for base station applications.

The PowerSO-10 plastic package,

designed to

offer

high

reliability, is

the

first ST JEDEC

approved, high power SMD package. It has been

specially

optimized

for RF needs and offers

excellent RF performances and ease of assembly.

PowerSO-10RF

(formed lead)

ORDER CODE

PD57070

BRANDING

PD57070

PowerSO-10RF

(straight lead)

ORDER CODE

PD57070S

BRANDING

PD57070S

ABSOLUTE MAXIMUM RATINGS (TCASE = 25

°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

± 20

V

ID

Drain Current

7

A

PDISS

Power Dissipation (@ Tc = 70°C)

95

W

Tj

Max. Operating Junction Temperature

165

°C

TSTG

Storage Temperature

-65 to +150

°C

THERMAL DATA (TCASE =70

°C)

Rth(j-c)

Junction -Case Thermal Resistance

1.0

°C/W

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

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