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BC182L
General Purpose Transistors
Page 2
31/05/05 V1.0
Absolute Maximum Ratings (Ta = 25°C unless specified otherwise)
Electrical Characteristics (Ta = 25°C unless specified otherwise)
Parameter
Symbol
Value
Units
Collector-Emitter Voltage
VCEO
50
V
Collector-Base Voltage
VCBO
60
Emitter-Base Voltage
VEBO
6.0
Collector Current Continuous
IC
100
mA
Power Dissipation at Ta = 25°C
Derate Above 25°C
PD
350
2.8
mW
mW/°C
Total Device Dissipation at TC = 25°C
Derate Above 25°C
1.0
8
W
mW/°C
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55 to +150
Thermal Resistance
Junction to Ambient
Rth(j-a)
375
ºC/W
Junction to Case
Rth(j-c)
125
Parameter
Symbol
Test Condition
Minimum Typical Maximum
Units
Collector-Emitter Voltage
VCEO
IC = 2mA, IB = 0
50
-
-
V
Collector-Base Voltage
VCBO
IC = 10µA, IE = 0
60
-
-
Emitter-Base Voltage
VEBO
IE = 100µA, IC = 0
6
-
-
Collector Cutoff Current
ICBO
VCB = 50V, IE = 0
-
-
15
nA
Emitter-Base Leakage Current
IEBO
VEB = 4.0V, IC = 0
-
-
15
DC Current Gain
hFE
IC = 2mA
BC182L
125
-
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 10mA, IB = 0.5mA
*IC = 100mA, IB = 5mA
-
-
0.25
0.6
V
Base-Emitter Saturation Voltage
VBE(sat)
*IC = 100mA, IB = 5mA
-
-
1.2
Base-Emitter On Voltage
VBE(on)
IC = 100µA, VCE = 5V
IC = 2mA, VCE = 5V
*IC = 100mA, VCE = 5V
0.55
0.5
0.83
0.7
Dynamic Characteristics
Current-Gain Bandwidth Product
fT
IC = 0.5mA, VCE = 3V, f = 100MHz
IC = 10mA, VCE = 5V, f = 100MHz
150
100
-
MHz
Common Base Output Capacitance
Cob
VCB = 10V, IC = 0, f = 1MHz
-
-
5.0
pF
*Pulse Condition : Width
≤300µs, Duty Cycle ≤2%.
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