IL440 datasheet(2/6 Pages) VISHAY

2 / 6 page

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Document Number: 83631

Rev. 1.6, 18-Jan-08

IL440

Vishay Semiconductors

Optocoupler, Phototriac Output,

Low Input Current

Notes

(1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device.

Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this

document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.

(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through

hole devices (DIP).

Notes

(1) Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the

device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

(2) Off-state output terminal voltage (see table 1.)

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

5.0

Forward current

Surge current

P.W. < 10 µs

IFSM

3.0

Power dissipation

Pdiss

100

Junction temperature

100

°C

OUTPUT

Peak off-state voltage

IL440-4

VDRM

400

IL440-5

VDRM

400

IL440-6

VDRM

400

On-state RMS current

ID(RMS)

100

Peak surge current

tp ≤ 10 ms

IFSM

1.2

Peak on-state current

tp/T = 0.01 ≤ 100 µs

IDRM

2.0

Power dissipation

Pdiss

300

Junction temperature

125

°C

COUPLER

Isolation voltage, 1.0 s, per standard

climate 23 °C/50 % RH, DIN 50014

VISO

5300

VRMS

Creepage distance

≥ 7.0

Clearance distance

≥ 7.0

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

≥ 1012

VIO = 500 V, Tamb = 100 °C

RIO

≥ 1011

Total power dissipation

Ptot

330

Storage temperature range

Tstg

- 55 to + 125

°C

Ambient temperature

Tamb

- 40 to + 100

°C

Junction temperature

100

°C

Lead soldering temperature (2)

2.0 mm from case, t < 10 s

Tsld

260

°C

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 50 mA

1.25

Reverse voltage

IR = 10 μAVR

5.0

Junction capacitance

VR = 0 V, f = 1.0 MHz

OUTPUT (2)

Peak on-state voltage

ITM = 100 mA, IFT = 30 mA

VTM

1.5

3.0

Critical rate of rise of off-state voltage

IF = 0, VS = 240 VRMS

dVcr/dt

V/µs

IF = 30 mA, VS = 60 VRMS

dVcrq/dt

0.13

0.25

V/µs

COUPLER

Holding current

IF ≥ 10 mA, VS ≥ 3.0 V

1.0

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