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E4D20120G Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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E4D20120G Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Silicon Carbide Schottky Diode E4D20120G www.iscsemi.com 1 FEATURES · Zero reverse recovery loss · Low forward voltage drop · High temperature operation capability APPLICATIONS · DC-DC converters · Solar inverters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Repetitive Peak Reverse Voltage 1200 V VR DC Peak Reverse Voltage 1200 V IF Continuous Forward Current,TC=150℃ 20 A IFRM Repetitive Peak Forward Surge Current,Half Sine Pulse,tp=10ms 83 A Ptot Power Dissipation 250 W TJ Max. Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ELECTRICAL CHARACTERISTICS(TJ = 25°C) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF Diode Forward Voltage IF= 20A -- -- 1.8 V IR Reverse current VR= 1200V -- -- 200 uA |
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