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FZT651 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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FZT651 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon NPN RF Power Transistor FZT651 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVCBO Collector-base breakdown voltage IC=100μA,IE= 0 80 -- -- V BVCEO Collector-emitter breakdown voltage IC=1mA,IB= 0 60 -- -- V BVEBO Emitter-base breakdown voltage IE=100μA,IC= 0 5 -- -- V ICBO Collector Cutoff Current VCB= 60V; IE= 0 -- -- 0.1 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 -- -- 0.1 μA hFE DC Current Gain IC= 50mA ; VCE= 2V 70 -- -- -- IC= 0.5A ; VCE= 2V 100 -- 300 -- IC= 1A ; VCE= 2V 80 -- -- -- IC= 2A ; VCE= 2V 40 -- -- -- VCE(sat) Collector-emitter saturation voltage IC= 1A; IB= 100mA -- -- 0.3 V IC= 3A; IB= 300mA -- -- 0.6 V VBE(sat) Base-emitter saturation voltage IC= 1A; IB= 100mA -- -- 1.25 V VBE(on) Base-emitter turn-on voltage VCE= 2V; IC= 1A -- -- 1.0 V fT Current-Gain-Bandwidth Product IC= 100mA ; VCE= 5V 140 -- -- MHz Cob Output capacitance IE= 0, VCB = 10V, f= 1MHz -- -- 30 pF |
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