STT818B_07 datasheet(4/10 Pages) STMICROELECTRONICS

Part #	STT818B

Description	High gain low voltage PNP power transistor

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 10 page

Electrical characteristics

STT818B

4/10

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = -30 V

TC = 125°C

-0.1

-20

µA

IEBO

Collector-cut-off current

(IC = 0)

VEB = -5 V

-0.1

µA

V(BR)CEO

(1)

Pulse duration = 300

µs, duty cycle 1.5 %.

Collector-emitter

breakdown voltage

(IB = 0)

IC = -10 mA

-30

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = -0.5 A

_ IB = -5 mA

IC = -1.2 A

IB = -12 mA

IC = -2 A

_ IB = -20 mA

-0.075

-0.21

-0.15

-0.3

-0.5

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = -0.5 A

_ IB = -5 mA

IC = -1.2A _ IB = -12 mA

IC = -2A _

IB = -20 mA

-0.74

-1.1

-1.2

hFE

(1)

DC current gain

IC = -0.5 A

VCE = -1 V

IC = -2.5 A

VCE = -3 V

100

VBE(ON)

(1)

Base-emitter voltage

IC = -0.5 A

VCE = -2 V

-0.71

-1.1

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