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MBR30150PT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR30150PT Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Schottky Rectifiers Diode MBR30150PT www.iscsemi.com 1 FEATURES · Low power loss · high efficiency · High surge current capability APPLICATIONS · DC to DC converters · Switching mode power supply · Adapters ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak repetitive Reverse voltage 150 V IF(AV) Forward current 30 A IFSM Surge peak forward current 8.3ms single half sine wave superimposed on rated load 200 A IFRM Peak repetitive forward current (Rated VR, Square wave, 20KHz) 30 A TJ Junction temperature 150 ℃ Tstg storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance, junction-to-case 1.4 ℃ /W ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF Forward voltage(Per Leg) IF= 30A -- 1.02 V IR Reverse leakage current VR = Rated VR -- 500 uA |
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