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MBRD340 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBRD340 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Schottky Rectifiers Diode MBRD340 www.iscsemi.com 1 FEATURES · Low Leakage Current · High Current Capability, High Efficiency · High Junction Temperature Capability APPLICATIONS · Power Supply · Switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak repetitive Reverse voltage 40 V IF(AV) Average Forward Rectified Current 50% duty cycle @ TL = 133°C, rectangular wave form 3 A IFSM Peak Forward Surge Current 10ms Sine or 6ms Rect. pulse 75 A TJ Junction temperature 150 ℃ Tstg storage temperature -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance, junction-to-case 6.0 ℃ /W ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF Forward voltage IF= 3A -- 0.6 V IR Reverse leakage current VR = rated VR -- 200 uA |
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