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10MQ040N Datasheet(PDF) 2 Page - International Rectifier |
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10MQ040N Datasheet(HTML) 2 Page - International Rectifier |
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2 / 7 page ![]() 10MQ040N Bulletin PD-20518 rev. N 0 7/04 2 www.irf.com V FM Max. Forward Voltage Drop (1) 0.54 V @ 1A * See Fig. 1 0.62 V @ 1.5A 0.49 V @ 1A 0.56 V @ 1.5A I RM Max. Reverse Leakage Current (1) 0.5 mA T J = 25 °C * See Fig. 2 26 mA T J = 125 °C V F(TO) Threshold Voltage 0.36 V T J = TJ max. r t Forward Slope Resistance 104 mΩ C T Typical Junction Capacitance 38 pF V R = 10VDC, TJ = 25°C, test signal = 1Mhz L S Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body dv/dt Max. Voltage Rate of Change 10000 V/µs (Rated VR) Part number 10MQ040N V R Max. DC Reverse Voltage (V) V RWM Max. Working Peak Reverse Voltage (V) 40 Voltage Ratings Absolute Maximum Ratings T J = 25 °C T J = 125 °C V R = rated VR Electrical Specifications Parameters 10MQ Units Conditions (1) Pulse Width < 300µs, Duty Cycle < 2% T J Max. Junction Temperature Range (*) - 55 to 150 °C T stg Max. Storage Temperature Range - 55 to 150 °C R thJA Max. Thermal Resistance Junction 80 °C/W DC operation to Ambient wt Approximate Weight 0.07(0.002) g (oz.) Case Style SMA Similar D-64 Device Marking IR1F Thermal-Mechanical Specifications Parameters 10MQ Units Conditions I F(AV) Max. Average Forward Current 1.5 A 50% duty cycle @ TL = 123 °C, rectangular wave form. * See Fig. 4 OnPCboard9mm2 island(.013mmthickcopperpad area) I FSM Max. Peak One Cycle Non-Repetitive 120 5µs Sine or 3µs Rect. pulse Surge Current * See Fig. 6 30 10ms Sine or 6ms Rect. pulse E AS Non-Repetitive Avalanche Energy 3.0 mJ T J = 25 °C, IAS = 1A, L = 6mH I AR Repetitive Avalanche Current 1.0 A Parameters 10MQ Units Conditions A Following any rated load condition and with rated V RRM applied < thermal runaway condition for a diode on its own heatsink (*) dPtot 1 dTj Rth( j-a) |
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