SD2900

RF POWER TRANSISTORS

HF/VHF/UHF N-CHANNEL MOSFETs

s

GOLD METALLIZATION

s

COMMON SOURCE CONFIGURATION

s

2 - 500 MHz

s

5 WATTS

s

28 VOLTS

s

13.5 dB MIN. AT 400 MHz

s

CLASS A OR AB OPERATION

s

EXCELLENT THERMAL STABILITY

DESCRIPTION

The SD2900 is a gold metallized N-Channel MOS

field-effect RF power transistor. It is intended for

use in 28 V DC large signal applications up to

500 MHz

PIN CONNECTION

November 1999

Symbol

Parameter

Val ue

Uni t

Drain Source Volt age

65

V

Ω)

65

V

Gat e-Source Voltage

±20

V

Drain Current

900

mA

Power Dissipat ion

21. 9

W

Max. O perat ing Junction Temperature

200

Storage Temperature

-65 to 150

THERMAL DATA

Junct ion-Case T hermal Resistance

Case-Heatsink T hermal Resist ance

∗

8.0

0.30

* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).

M113

epoxy sealed

®

ORDER CODE

BRANDING

SD2900

SD2900

1. Drain

3.Gate

2. Source

4. Source

1/8