SD2903

RF POWER TRANSISTORS

HF/VHF/UHF N-CHANNEL MOSFETs

s

GOLD METALLIZATION

s

2 - 500 MHz

s

30 WATTS

s

28 VOLTS

s

13 dB MIN. AT 400 MHz

s

CLASS A OR AB OPERATION

s

EXCELLENT THERMAL STABILITY

s

COMMON SOURCE CONFIGURATION,

PUSH-PULL

DESCRIPTION

The SD2903 is a gold metallized N-Channel MOS

field-effect RF power transistor. It is intended for

use in 28 V DC large signal applications up to

500 MHz

PIN CONNECTION

November 1999

Symbol

Parameter

Val ue

Uni t

Drain Source Voltage

65

V

Drain-Gate Voltage

(RG S = 1 M

Ω)

65

V

Gat e-Source Volt age

±20

V

Drain Current

5

A

Power Dissipation

100

W

Max. O perating Junction Temperature

200

Storage T emperat ure

-65 to 150

THERMAL DATA

Junction-Case Thermal Resistance

Case-Heatsink T hermal Resist ance

∗

1.75

0.40

* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).

M229

(epoxy sealed)

®

ORDER CODE

BRANDING

SD2903

SD2903

1. Drain

4.Gate

2. Drain

5.Gate

3. Source

1/8