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IXTN60N50L2 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # IXTN60N50L2
Description  N-Channel MOSFET
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXTN60N50L2 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  IXTN60N50L2 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXTN60N50L2 Datasheet HTML 2Page - Inchange Semiconductor Company Limited IXTN60N50L2 Datasheet HTML 3Page - Inchange Semiconductor Company Limited IXTN60N50L2 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISFM1065
eq IXTN60N50L2
N-Channel MOSFET
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 1mA
500
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0V
--
--
50
uA
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0V
--
--
±200
nA
VGS(th)
Gate Threshold Voltage
VDS =VGS; ID= 250uA
2.5
--
5.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 20V; ID= 30A
--
--
100
mΩ
VSD
Forward On-Voltage
IS= 60A; VGS= 0V
--
--
1.5
V
Ciss
Input Capacitance
VGS=0V,VDS=25V,f=1MHZ
--
11500
--
pF
Coss
Output Capacitance
--
1450
--
Crss
Reverse Transfer Capacitance
--
210
--
tdon
Turn-on Delay Time
ID=30A,VDD=250V,
VGS=15V,RG=10Ω
--
35
--
ns
tr
Rise Time
--
85
--
tdoff
Turn-Off Delay Time
--
110
--
tf
Fall Time
--
75
--
Qg
Total Gate Charge
ID=30A,VDD=250V,VGS=20V
--
550
--
nC
Qgs
Gate to Source Charge
--
115
--
Qgd
Gate to Drain
(“Miller”)Charge
--
180
--
trr
Reverse Recovery Time
IS=30A,di/dt=100A/us,VGS=0V
--
500
--
ns
Qrr
Reverse Recovery Charge
--
800
--
nC



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