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SD2933 Datasheet(PDF) 1 Page - STMicroelectronics |
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SD2933 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 8 page ![]() 1/8 ADVANCE DATA Jun 2000 SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs M177 epoxy sealed ORDER CODE SD2933 BRANDING SD2933 • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING DESCRIPTION The SD2933 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 150 MHz PIN CONNECTION 1. Drain 2. Source 3. Gate 4. Source 5. Source ABSOLUTE MAXIMUM RATINGS(TCASE =25 0C) Symbol Parameter Value Unit V(BR)DSS Drain Source Volatage 125 V VDGR Drain-Gate Voltage (RGS =1MΩ) 125 V VGS Gate-Source Voltage ±20 V ID Drain Current 40 A PDISS Power Dissipation 648 W Tj Max. Operating Junction Temperature 200 0C TSTG Storage Temperature -65 to 150 0C THERMAL DATA Rth(j-c) Rth(c-s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance* 0.27 0.15 0C/W 0C/W * Determined using a flat aluminum or copper heatsink with thermal compound apllied (Dow Corning 340 or equivalent). |
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