MOC8111 datasheet(2/5 Pages) VISHAY

2 / 5 page

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Document Number: 83661

Rev. 1.5, 11-Jan-08

MOC8111/MOC8112

Vishay Semiconductors

Optocoupler, Phototransistor Output,

No Base Connection

Notes

(1) Tamb = 25 °C, unless otherwise specified.

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum

ratings for extended periods of the time can adversely affect reliability.

(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through

hole devices (DIP).

Note

Tamb = 25 °C, unless otherwise specified.

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

COUPLER

Isolation test voltage between emitter

and detector refer to standard climate

23/50 DIN 50014

VISO

5300

VRMS

Creepage distance

≥ 7mm

Clearance distance

≥ 7mm

Isolation thickness between

emitter and detector

≥ 4mm

Comparative tracking index per

DIN IEC 112/VDE 0303, part 1

CTI

175

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

1012

VIO = 500 V, Tamb = 100 °C

RIO

1011

Storage temperature range

Tstg

- 55 to + 150

°C

Ambient temperature range

Tamb

- 55 to + 100

°C

Soldering temperature (2)

max. 10 s, dip soldering distance

to seating plane

≥ 1.5 mm

Tsld

260

°C

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 10 mA

1.15

1.5

Reverse leakage current

VR = 6.0 V

0.05

µA

Junction capacitance

V = 0 V, f = 1.0 MHz

OUTPUT

Collector emitter breakdown voltage

IC = 1.0 µA

BVCEO

Collector emitter leakage current

VCE = 10 V

ICEO

1.0

Emitter collector breakdown voltage

IE = 10 µA

BVECO

7.0

Collector emitter capacitance

VCE = 0 V, f = 1.0 MHz

CCE

7.0

COUPLER

Collector saturation voltage

IC = 500 µA, IF = 10 mA

VCEsat

0.15

0.4

CURRENT TRANSFER RATIO

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Current transfer ratio

IF = 10 mA, VCE = 10 V

MOC8111

CTR

MOC8112

CTR

SWITCHING CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Turn-on time

VCC = 10 V, RL = 100 Ω

IC = 2.0 mA, see figure 1

ton

7.5

µs

Turn-off time

VCC = 10 V, RL = 100 Ω

IC = 2.0 mA, see figure 1

toff

5.7

µs

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