SCS306AM

SiC Schottky Barrier Diode

1 ≦

≦ 10ms, Tvj=25°C

1 ≦

≦ 10ms, Tvj=150°C

*1 Limited by maximum Tvj and for Max. RthJC. *2 Tc=100°C, Tvj=150°C, Duty cycle=10% *3 Tc=25°C

A

PW=10ms sinusoidal, Tvj=150°C

8.0

-55 to +175

170

°C

175

A

2s

A

2s

°C

11

Surge non-

repetitive forward

current

PW=10ms sinusoidal, Tvj=25°C

PW=10

ms square, T

vj=25°C

Tvj

40

Range of storage temperature

Tstg

i

2t value

∫i2dt

PW

PW

Virtual Junction temperature

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Continuous forward current

(Tc= 120°C)

lAbsolute maximum ratings (T

vj=25°C unless otherwise specified)

Unit

Value

Repetitive peak forward current

Total power disspation

VR

IF

IFSM

IFRM

PD

650

650

6

22

30

47

A

A

VRM

Tube

-

Type

Packaging

Reel size (mm)

C7G

SCS306AM

Basic ordering unit (pcs)

Tape width (mm)

-

50

Marking

Packing code

lFeatures

19nC

1) Shorter recovery time

A

W

Symbol

・PV Power Conditioners

lApplications

・Data Center

・PFC Boost Topology

・Secondary Side Rectification

Parameter

V

V

A

3) High-speed switching possible

lOutline

lInner circuit

lPackaging specifications

TO-220FM-2LGE

2) Reduced temperature dependence

4) High surge current capability

650V

6A

VR

IF

QC

*2

*3

(1) Cathode

(2) Anode

*1

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TSZ22111・14・001

1/7

TSQ50232-SCS306AM

15.Dec.2023 - Rev.001

Datasheet