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CHA3689 Datasheet(PDF) 2 Page - United Monolithic Semiconductors |
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CHA3689 Datasheet(HTML) 2 Page - United Monolithic Semiconductors |
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2 / 10 page ![]() CHA3689 12.5-30GHz Low Noise Amplifier Ref. : DSCHA36897082 - 23 Mar 07 2/10 /Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Electrical Characteristics (low current configuration) These values are representative on wafer measurements that are made without bonding wires at the RF ports. Tamb = +25°C, Vd1=Vd2=Vd3= +4V Pads B, D = not connected Symbol Parameter Min Typ Max Unit Fop Operating frequency range 12.5 30 GHz G Gain (12.5 - 24GHz) Gain (24.5 - 30GHz) 23 20 26 22 dB dB ∆G Gain flatness (12.5 - 24GHz) Gain flatness (24.5 - 30GHz) ±2.5 ±2 dB dB NF Noise figure (12.5 - 24GHz) Noise figure (24.5 - 30GHz) 1.8 2.0 2.3 2.5 dB dB S11 Input return loss (12.5 - 16GHz) (27 - 30GHz) Input return loss (16 - 27GHz) 3.0:1 2.0:1 3.5:1 2.5:1 S22 Output return loss 2.5:1 3.0:1 OIP3 3rd order intercept point (18 – 30GHz) 23 24 dBm P1dB Output power at 1dB gain compression 13 14 dBm Id Drain bias current 90 120 mA Vd Drain bias voltage 4 V Electrical Characteristics (high current configuration) Tamb = +25°C, Vd1=Vd2=Vd3 = +4V Pads B, D = GND Symbol Parameter Min Typ Max Unit Fop Operating frequency range 12.5 30 GHz G Gain (12.5 - 24GHz) Gain (24.5 - 30GHz) 24 21 27 23 dB dB ∆G Gain flatness (12.5 - 24GHz) Gain flatness (24.5 - 30GHz) ±2.5 ±2 dB dB NF Noise figure (12.5 - 24GHz) Noise figure (24.5 - 30GHz) 1.9 2.1 2.4 2.6 dB dB S11 Input return loss (12.5 - 16GHz) (27 - 30GHz) Input return loss (16 - 27GHz) 3.0:1 2.0:1 3.5:1 2.5:1 S22 Output return loss 2.5:1 3.0:1 OIP3 3rd order intercept point (18 – 30GHz) 25 26 dBm P1dB Output power at 1dB gain compression 14 15 dBm Id Drain bias current 120 150 mA Vd Drain bias voltage 4 V |
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