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CHA3689 Datasheet(PDF) 2 Page - United Monolithic Semiconductors

Part # CHA3689
Description  12.5-30GHz Low Noise Amplifier
PDF  10 Pages
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Manufacturer  UMS [United Monolithic Semiconductors]
Direct Link  http://www.ums-gaas.com
Logo UMS - United Monolithic Semiconductors

CHA3689 Datasheet(HTML) 2 Page - United Monolithic Semiconductors

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CHA3689
12.5-30GHz Low Noise Amplifier
Ref. : DSCHA36897082 - 23 Mar 07
2/10
/Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics (low current configuration)
These values are representative on wafer measurements that are made without bonding wires
at the RF ports.
Tamb = +25°C, Vd1=Vd2=Vd3= +4V
Pads B, D = not connected
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
12.5
30
GHz
G
Gain (12.5 - 24GHz)
Gain (24.5 - 30GHz)
23
20
26
22
dB
dB
∆G
Gain flatness (12.5 - 24GHz)
Gain flatness (24.5 - 30GHz)
±2.5
±2
dB
dB
NF
Noise figure (12.5 - 24GHz)
Noise figure (24.5 - 30GHz)
1.8
2.0
2.3
2.5
dB
dB
S11
Input return loss (12.5 - 16GHz) (27 - 30GHz)
Input return loss (16 - 27GHz)
3.0:1
2.0:1
3.5:1
2.5:1
S22
Output return loss
2.5:1
3.0:1
OIP3
3rd order intercept point (18 – 30GHz)
23
24
dBm
P1dB
Output power at 1dB gain compression
13
14
dBm
Id
Drain bias current
90
120
mA
Vd
Drain bias voltage
4
V
Electrical Characteristics (high current configuration)
Tamb = +25°C, Vd1=Vd2=Vd3 = +4V
Pads B, D = GND
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
12.5
30
GHz
G
Gain (12.5 - 24GHz)
Gain (24.5 - 30GHz)
24
21
27
23
dB
dB
∆G
Gain flatness (12.5 - 24GHz)
Gain flatness (24.5 - 30GHz)
±2.5
±2
dB
dB
NF
Noise figure (12.5 - 24GHz)
Noise figure (24.5 - 30GHz)
1.9
2.1
2.4
2.6
dB
dB
S11
Input return loss (12.5 - 16GHz) (27 - 30GHz)
Input return loss (16 - 27GHz)
3.0:1
2.0:1
3.5:1
2.5:1
S22
Output return loss
2.5:1
3.0:1
OIP3
3rd order intercept point (18 – 30GHz)
25
26
dBm
P1dB
Output power at 1dB gain compression
14
15
dBm
Id
Drain bias current
120
150
mA
Vd
Drain bias voltage
4
V



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