PHOTO DIODE SILICON PIN LED LAMPS
SERIES
MAXIMUM RATINGS (TA=25
)
•℃
Package Dimension
Description
The LPD3330 series are silicon planar
P/N photodiodes incorporated in plastic
package that simultaneously serve as
filter and are also Transparent for infrared
emission their terminals are soldering
tabs arranged in 2.54mm center to center
spacing due to their design the diodes
can vertically be assembled on pc boards
arrays can be realized by multiple
arrangement versatile photodetectors are
suitable for diodes as well as voltaic cell
operation the signal noise ratio is
particularly favorable even at low
illuminance the P/N photodiode are
outstanding for low junction capacitance
high cut-off frequency and fast switching
times.
They are particularly suitable for IR
sound transmission and remote control
the cathode of LPD3330 photodiode is
marked by a stamping on the package
edge
ELECTRICAL CHARACTERISTICS AT (TA=
)
•℃
DOC.NO
:QW0905-LPD3330
REV:B
Date:17 - Aug - 2005
LPD3330
NOTE:1.All dimension are In millimeters tolerance Is
±0.25 unless otherwise noted
2.Specifications are subject to change without notice
Characteristic
Symbol
Rating
nit
Characteristic
Symbol
Test Condition
Unit
Min
Typ
Max
Reverse Break Down Voltage
VBR
30
V
Tstg
℃
℃
-30 ﹣ +60
Topr
Operating Temperature
mW
150
PD
Power Dissipation
Storage Temperature
-40 ﹣ +60
ns
－
50
VR=10V RL=1KΩ－
－
940
－
nm
VR=3V f=1MHZ
－
20
－
pF
λP=940nm
_
－
mV
Ee=0.5mW/c㎡
VR=5V
Ee=0.5mW/c㎡
1.5
2.0
－
uA
VR=10V
－
1.0
30
nA
ID
Isc
Voc
CT
λsmax
tr,tf
Dark Current
Short Circuit Current
Open Circuit Voltage
Total Capacitance
Peak Wavelength of Max Sensitivity
Rise Time,Fall Time
350
Ee=0mW/c㎡
λP=940nm
Ee=0mW/c㎡
8.6
5.0
5.9
1.5MAX
□0.5
TYP
1.0MIN
25.0MIN
2.54TYP
7.6
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