SD57060

RF POWER TRANSISTORS

The

LdmoST FAMILY

PRELIMINARY DATA

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

s

EXCELLENT THERMAL STABILITY

s

COMMON SOURCE CONFIGURATION

s

s

BeO FREE PACKAGE

DESCRIPTION

The SD57060 is a common source N-Channel

enhancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial

and industrial applications at frequencies up to

1.0 GHz. The SD57060 is designed for high gain

and

broadband

performance

operating

in

common source mode at 28V. It is ideal for base

station applications requiring high linearity.

PIN CONNECTION

January 2000

Symbol

Parameter

Val ue

Uni t

Drain Source Voltage

65

V

Gat e-Source Volt age

± 20

V

Drain Current

7

A

Power Dissipation (@ Tc= 70

108

W

Max. O perating Junction Temperature

200

Storage T emperat ure

-65 to 150

Junction-Case Thermal Resistance

Case-Heatsink T hermal Resist ance

1.2

0.45

* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).

M243

epoxy sealed

®

ORDER CODE

BRANDING

SD57060

TSD57060

1. Drain

3.Source

2. Gate

1/8