CHA5294

RoHS COMPLIANT

Ref. : DSCHA52946237 - 25 Aug 06

1/6

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

30-40GHz Medium Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA5294 is a high gain four-stage monolithic

medium power amplifier. It is designed for a wide

range of applications, from military to commercial

communication systems. The backside of the chip is

both RF and DC grounded. This helps to simplify the

assembly process.

The circuit is manufactured with a PM-HEMT

process, 0.15µm gate length, via holes through the

substrate, air bridges and electron beam gate

lithography.

It is available in chip form.

Main Features

¦

Performances : 30-40GHz

¦

24dBm output power @ 1dB comp.

¦

26 dB gain

¦

DC power consumption, 500mA @ 4V

¦

Chip size :

4.10 x 1.42 x 0.07 mm

Vd1

Vd2

Vd3

Vd4

Vg1

Vg2

Vg3

Vg4

IN

OUT

Typical on jig Measurements

16

18

20

22

24

26

28

30

30

32

34

36

38

40

Frequency GHz

Linear Gain (dB)

Pout@-1dB

(dBm)

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

30

40

GHz

G

Small signal gain

26

dB

P1dB

Output power at 1dB gain compression

24

dBm

Id

Bias current

500

mA

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !