74HC_HCT20

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Product data sheet

Rev. 3 — 3 September 2012

5 of 16

NXP Semiconductors

74HC20; 74HCT20

Dual 4-input NAND gate

CI

input

capacitance

-3.5

-

-

-

-

-

pF

74HCT20

VIH

HIGH-level

input voltage

VCC = 4.5 V to 5.5 V

2.0

1.6

-

2.0

-

2.0

-

V

VIL

LOW-level

input voltage

VCC = 4.5 V to 5.5 V

-

1.2

0.8

-

0.8

-

0.8

V

VOH

HIGH-level

output voltage

VI = VIH or VIL; VCC = 4.5 V

IO = 20 A

4.4

4.5

-

4.4

-

4.4

-

V

IO = 4.0 mA

3.98

4.32

-

3.84

-

3.7

-

V

VOL

LOW-level

output voltage

VI = VIH or VIL; VCC = 4.5 V

IO = 20 A

-

0

0.1

-

0.1

-

0.1

V

IO = 5.2 mA

-

0.15

0.26

-

0.33

-

0.4

V

II

input leakage

current

VI = VCC or GND;

VCC =5.5 V

--

0.1

-

1-

1

A

ICC

supply current

VI = VCC or GND; IO =0A;

VCC =5.5 V

--

2

-

20

-

40

A

I

CC

additional

supply current

per input pin;

VI =VCC  2.1 V; IO =0A;

other inputs at VCC or GND;

VCC = 4.5 V to 5.5 V

-

30

108

-

135

-

147

A

CI

input

capacitance

-3.5

-

-

-

-

-

pF

Table 6.

Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

25

C

40 C to +85 C 40 C to +125 C Unit

Min

Typ

Max

Min

Max

Min

Max