74HC_HCT2G34_1

Product data sheet

Rev. 01 — 6 October 2006

7 of 14

Nexperia

74HC2G34; 74HCT2G34

Dual buffer gate

11. Dynamic characteristics

Tamb = −40 °C to +125 °C

VIH

HIGH-level input voltage

VCC = 4.5 V to 5.5 V

2.0

-

-

V

VIL

LOW-level input voltage

VCC = 4.5 V to 5.5 V

-

-

0.8

V

VOH

HIGH-level output voltage

VI = VIH or VIL

IO = −20 µA; VCC = 4.5 V

4.4

-

-

V

IO = −4.0 mA; VCC = 4.5 V

3.7

-

-

V

VOL

LOW-level output voltage

VI = VIH or VIL

IO = 20 µA; VCC = 4.5 V

-

-

0.1

V

IO = 4.0 mA; VCC = 4.5 V

-

-

0.4

V

II

input leakage current

VI = GND or VCC; VCC = 5.5 V

-

-

±1.0

µA

ICC

supply current

VI = GND or VCC; IO = 0 A;

VCC = 5.5 V

-

-

20.0

µA

∆ICC

additional supply current

VI = VCC − 2.1 V;

VCC = 4.5 V to 5.5 V; IO = 0 A

-

-

410

µA

Table 8.

Static characteristics for 74HCT2G34 …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 9.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.

Symbol

Parameter

Conditions

25

°C

−40 °C to +125 °C

Unit

Min

Typ

Max

Min

Max

(85

°C)

Max

(125

°C)

74HC2G34

tpd

propagation delay

nA to nY; see Figure 5

[1]

VCC = 2.0 V; CL = 50 pF

-

29

75

-

95

125

ns

VCC = 4.5 V; CL = 50 pF

-

9

15

-

19

25

ns

VCC = 6.0 V; CL = 50 pF

-

8

13

-

16

20

ns

tt

transition time

nY; see Figure 5

[2]

VCC = 2.0 V; CL = 50 pF

-

18

75

-

95

125

ns

VCC = 4.5 V; CL = 50 pF

-

6

15

-

19

25

ns

VCC = 6.0 V; CL = 50 pF

-

5

13

-

16

20

ns

CPD

power dissipation

capacitance

VI = GND to VCC

[3]

-10-

-

-

-

pF

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