74HC_HCT573

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Product data sheet

Rev. 7 — 4 March 2016

9 of 20

NXP Semiconductors

74HC573; 74HCT573

Octal D-type transparent latch; 3-state

[1]

tpd is the same as tPLH and tPHL.

[2]

ten is the same as tPZH and tPZL.

[3]

tdis is the same as tPLZ and tPHZ.

[4]

tt is the same as tTHL and tTLH.

[5]

CPD is used to determine the dynamic power dissipation (PD in W).

PD =CPD  VCC2  fi  N+ (CL  VCC2  fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

(C

L  VCC

2

 f

o) = sum of outputs.

74HCT573

tpd

propagation

delay

Dn to Qn; see Figure 7

[1]

VCC = 4.5 V

-

20

35

-

44

-

53

ns

VCC =5V; CL =15pF

-

17

-

-

-

-

-

ns

tpd

propagation

delay

LE to Qn; see Figure 8

[1]

VCC = 4.5 V

-

18

35

-

44

-

53

ns

VCC =5V; CL =15pF

-

15

-

-

-

-

-

ns

ten

enable time

OE to Qn; see Figure 9

[2]

VCC = 4.5 V

-

17

30

-

38

-

45

ns

tdis

disable time

OE to Qn; see Figure 9

[3]

VCC = 4.5 V

-

18

30

-

38

-

45

ns

tt

transition

time

Qn; see Figure 7

[4]

VCC = 4.5 V

-

5

12

-

15

-

18

ns

tW

pulse width

LE HIGH; see Figure 8

VCC = 4.5 V

16

5

-

20

-

24

-

ns

tsu

set-up time

Dn to LE; see Figure 10

VCC = 4.5 V

13

7

-

16

-

20

-

ns

th

hold time

Dn to LE; see Figure 10

VCC = 4.5 V

9

4

-

11

-

15

-

ns

CPD

power

dissipation

capacitance

CL =50pF;f= 1 MHz;

VI =GND to VCC  1.5 V

[5]

-26

-

-

-

-

-

pF

Table 7.

Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit see Figure 11.

Symbol Parameter

Conditions

25

C

40 C to +85 C 40 C to +125 C Unit

Min

Typ

Max

Min

Max

Min

Max