NPN Power Transistor

2SC1384

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VCEO

Collector-Emitter Sustaining Voltage

IC= 1mA, IB= 0A

50

--

--

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 500mA, IB= 50mA

--

--

0.4

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 500mA, IB= 50mA

--

--

1.2

V

ICBO

Collector Cut-off Current

VCB= 50V

--

--

0.1

uA

hFE-1

DC Current Gain

IC= 500mA, VCE= 10V

85

--

340

--

hFE-2

DC Current Gain

IC= 1A, VCE= 5V

50

--

--

--

fT

Transition frequency

VCE = 10V, IC = 50mA

--

200

--

MHz

hFE-1 Classifications

Q

R

S

85-170

120-240

170-340

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notification. The information contained herein is presented only as a guide for the applications of our

products.

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