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ADM7150 Datasheet(PDF) 1 Page - Analog Devices

Part # ADM7150
Description  USB-Powered, 5.8 GHz RF Power Amplifier with Overtemperature Management
PDF  8 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADM7150 Datasheet(HTML) 1 Page - Analog Devices

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Circuit Note
CN-0523
analog.com
Circuits from the Lab™ circuits from Analog Devices have been designed and built by Analog Devices
engineers. Standard engineering practices have been employed in the design and construction of each circuit,
and their function and performance have been tested and verified in a lab environment at room temperature.
However, you are solely responsible for testing the circuit and determining its suitability and applicability for
your use and application. Accordingly, in no event shall Analog Devices be liable for direct, indirect, special,
incidental, consequential or punitive damages due to any cause whatsoever connected to the use of any
Circuits from the Lab circuits. (Continued on last page)
Rev. 0 | 1 of 8
Circuits from the Lab
® reference designs are engi-
neered and tested for quick and easy system integra-
tion to help solve today’s analog, mixed-signal, and
RF design challenges. For more information and/or
support, visit www.analog.com/CN0523.
Devices Connected/Referenced
HMC407
5 GHz to 7 GHz RF Power Amplifier
ADT6401
2.7 V to 5.5 V, Pin-Selectable Temperature Switch
LT8364
Low IQ Boost/SEPIC/Inverting Converter with 4 A, 60 V Switch
ADM7150
800 mA, Ultralow Noise/High PSRR LDO
ADM7171
6.5 V, 1A, Ultralow Noise, High PSRR, CMOS LDO
USB-Powered, 5.8 GHz RF Power Amplifier with Overtemperature Management
EVALUATION AND DESIGN SUPPORT
►
Circuit Evaluation Boards
►
CN0523 Circuit Evaluation Board (EVAL-CN0523-EBZ)
►
Design and Integration Files
►
Schematics, Layout Files, Bill of Materials
CIRCUIT FUNCTIONS AND BENEFITS
The International Telecommunication Union allocates the unli-
censed 5.8 GHz industrial, scientific, and medical (ISM) radio
frequency band for worldwide use. Advancements in wireless tech-
nologies and standards, as well as minimal regulatory compliance
requirements, have made this frequency band popular for short
range, wireless communication systems.
One popular application for the 5.8 GHz frequency band is Wi-Fi,
where its 150 MHz channel bandwidth accommodates up to 24
non-overlapping Wi-Fi channels. While its transmission range is
shorter than that of the 2.4 GHz frequency band, its higher per
channel bandwidth makes it suitable for short distance, high data
rate communication applications.
Other common uses can be found in software defined radio,
wireless access points, public safety radio, wireless repeaters,
femtocells, wireless broadband communication such as in 4G long
term evolution (LTE) and worldwide interoperability for microwave
access (WiMAX), and base transceiver station infrastructures.
In any radio transmission application, a high gain amplifier is
required to drive the antenna. This can be implemented in one
or more stages depending on the application requirements, with
higher output power values extending the range of the RF transmis-
sion. To achieve the optimal performance, several factors must be
considered in the design, such as proper impedance matching,
noise figure, frequency response, power management, and thermal
management.
The circuit shown in Figure 1 is a two-stage, RF power amplifier
optimized for transmit signal chains operating in the 5.8 GHz ISM
band. The circuit has a gain of approximately 24 dB and an input
return loss of approximately 11 dB at the center frequency. The RF
input and output ports are designed with a 50 Ω impedance match,
enabling direct connection between the circuit and standard 50 Ω
systems.
To prevent overheating, a temperature monitoring switch circuit
disables the RF amplifier when the user-defined temperature trip
point is reached. This switch circuitry also automatically enables the
amplifier when the temperature falls below the hysteresis set point.
Figure 1. CN0523 Simplified Block Diagram


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