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IXBT6N170 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IXBT6N170
Description  IGBT
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXBT6N170 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  IXBT6N170 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXBT6N170 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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IXBT6N170
IGBT
www.iscsemi.com
1
FEATURES
· Low Saturation Voltage:VCE(sat)=3.4V@IC=6A
· High blocking voltage
· Integrated Anti-parallel diode
· Low conduction losses
APPLICATIONS
· Laser generator
· Capacitor discharge circuit
· UPS
· AC switches
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1700
V
VGES
Gate-Emitter Voltage
±
20
V
IC
Collector Current-Continuous
12
A
ICM
Pulsed Collector Current ,1ms
36
A
PD
Power Dissipation
75
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.67
℃
/W


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