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KSB834W Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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KSB834W Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc Silicon PNP Transistor KSB834W www.iscsemi.com 1 FEATURES · Complement to KSD880W · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter peak Voltage -60 V VEBO Emitter-Base Voltage -60 V IC Collector Current-Continuous -7 A ICM Peak Pulse Current -3 A PD Total Power Dissipation@ TC=25℃ 30 W PD Total Power Dissipation@ Ta=25℃ 1.5 W TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ |
Similar Part No. - KSB834W |
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Similar Description - KSB834W |
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