Nexperia

PMDPB30XNA

20 V, dual N-channel Trench MOSFET

Tamb (°C)

-75

175

125

25

75

-25

aaa-030137

40

80

120

Pder

(%)

0

Fig. 1. Normalized total power dissipation as a

function of ambient temperature

Tamb (°C)

-75

175

125

25

75

-25

aaa-030138

40

80

120

Ider

(%)

0

Fig. 2. Normalized continuous drain current as a

function of ambient temperature

aaa-038710

VDS (V)

10-1

102

10

1

10-1

10-2

10

1

102

ID

(A)

10-3

Limit RDSon = VDS/ID

DC; Tsp = 25 °C

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

100 ms

10 ms

1 ms

100 µs

tp = 10 µs

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

PMDPB30XNA

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Product data sheet

12 February 2024

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