SSRP105B1RL datasheet(4/6 Pages) STMICROELECTRONICS

4 / 6 page

SSRP105B1

4/6

Symbol

Parameter

Test conditions (note 1)

Min.

Typ.

Max.

Unit

VBO

Breakover voltage

(note 2)

Positive voltage

Negative voltage

. 50Hz

. 10/700µs

. 50Hz

. 10/700µs

165

225

Holding current

Positive polarity

Negative polarity

100

150

Leakage current

(note 3)

VR = +105 V

VR = - 180 V

µA

Capacitance

F = 1MHz, VRMS = 1V, VR(T/G) = -5V

F = 1MHz, VRMS = 1V, VR(T/G) = -50V

ELECTRICAL CHARACTERISTICS between TIP and GND, RING and GND (Tamb=25°C)

Symbol

Parameter

Test conditions

Min

Max

Unit

Leakage current (note 3)

VR = +180 V

VR = - 180 V

µA

Note 1:

Positive voltage means between T and G, or between R and G.

Negative voltage means between G and T, or between G and R.

Note 2:

See test circuit for VBO parameters

Note 3:

IR measured at VR guarantees VBR >VR

ELECTRICAL CHARACTERISTICS between TIP and RING (Tamb=25°C)

IH(Tamb)/IH(Tamb=25°C)

Tamb(°C)

0.2

0.4

0.6

0.8

1.2

2040

6080

Fig. 4: Relative variation of holding current versus

junction temperature.

0.01

0.1

100

1000

F= 50Hz

ITSM(A)

tp(s)

Fig. 5: Non-repetitive peak on-state current versus

overload duration (Tj initial = +25°C)..

100

1000

Tj= 25°C

F= 1MHz

Vrms= 1V

TIPor RING(+) / GND(-)

GND(+) / TIP or RING(-)

C(pF)

VR(V)

Fig. 6: Capacitance versus applied reverse

voltages (typical values).

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