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STF16NF25 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STF16NF25
Description  N-channel 250V - 0.195Ω - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF16NF25 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD16NF25 - STF16NF25 - STP16NF25
4/16
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1mA, VGS =0
250
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max ratings
VDS = max ratings,
TC = 125°C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 6.5A
0.195
0.235
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward
transconductance
VDS = 15V, ID =6.5A
10
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
680
125
20
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80%
Equivalent output
capacitance
VDS = 0V to 200V,
VGS = 0
48
pF
RG
Intrinsic gate resistance
f=1MHz, open drain
2.1
Ω
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 125V, ID = 6.5A
RG =4.7Ω VGS = 10V
(see Figure 18)
9
17
35
17
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 200V, ID = 6.5A,
VGS = 10V
(see Figure 19)
18
3
8
nC
nC
nC



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