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STTH8R04DI Datasheet(PDF) 1 Page - STMicroelectronics |
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STTH8R04DI Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 11 page ![]() March 2007 Rev 1 1/11 STTH8R04 Ultrafast recovery diode Main product characteristics Features and benefits ■ Very low switching losses ■ High frequency and high pulsed current operation ■ High junction temperature ■ Insulated packages – TO-220AC Ins Electrical insulation = 2500 V RMS Capacitance = 7 pF – TO-220FPAC Electrical insulation = 1500 V RMS Capacitance = 12 pF Description The STTH8R04 series uses ST's new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. Order codes IF(AV) 8 A VRRM 400 V Tj (max) 175° C VF (typ) 0.9 V trr (typ) 25 ns Part Number Marking STTH8R04D STTH8R04D STTH8R04DI STTH8R04DI STTH8R04FP STTH8R04FP STTH8R04G STTH8R04G STTH8R04G-TR STTH8R04G K A K K A K A K A NC K A TO-220AC STTH8R04D TO-220FPAC STTH8R04FP D2PAK STTH8R04G TO-220AC Ins STTH8R04DI www.st.com |
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