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M48T08 Datasheet(PDF) 12 Page - STMicroelectronics |
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M48T08 Datasheet(HTML) 12 Page - STMicroelectronics |
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12 / 30 page ![]() Operation modes M48T08, M48T08Y, M48T18 12/30 Table 4. Write mode AC characteristics Data retention mode With valid VCC applied, the M48T08/18/08Y operates as a conventional BYTEWIDE™ static RAM. Should the supply voltage decay, the RAM will automatically power-fail deselect, write protecting itself when VCC falls within the VPFD (max), VPFD (min) window. All outputs become high impedance, and all inputs are treated as “Don't care.” Note: A power failure during a WRITE cycle may corrupt data at the currently addressed location, but does not jeopardize the rest of the RAM's content. At voltages below VPFD (min), the user can be assured the memory will be in a write protected state, provided the VCC fall time is not less than tF. The M48T08/18/08Y may respond to transient noise spikes on VCC that reach into the deselect window during the time the device is sampling VCC. Therefore, decoupling of the power supply lines is recommended. Symbol Parameter(1) 1. Valid for ambient operating temperature: TA = 0 to 70°C; VCC = 4.75 to 5.5V or 4.5 to 5.5V (except where noted). M48T08/M48T18/T08Y Unit –100/–10 (T08Y) –150/–15 (T08Y) MinMax MinMax tAVAV WRITE Cycle Time 100 150 ns tAVWL Address Valid to WRITE Enable Low 0 0 ns tAVE1L Address Valid to Chip Enable 1 Low 0 0 ns tAVE2H Address Valid to Chip Enable 2 High 0 0 ns tWLWH WRITE Enable Pulse Width 80 100 ns tE1LE1H Chip Enable 1 Low to Chip Enable 1 High 80 130 ns tE2HE2L Chip Enable 2 High to Chip Enable 2 Low 80 130 ns tWHAX WRITE Enable High to Address Transition 10 10 ns tE1HAX Chip Enable 1 High to Address Transition 10 10 ns tE2LAX Chip Enable 2 Low to Address Transition 10 10 ns tDVWH Input Valid to WRITE Enable High 50 70 ns tDVE1H Input Valid to Chip Enable 1 High 50 70 ns tDVE2L Input Valid to Chip Enable 2 Low 50 70 ns tWHDX WRITE Enable High to Input Transition 5 5 ns tE1HDX Chip Enable 1 High to Input Transition 5 5 ns tE2LDX Chip Enable 2 Low to Input Transition 5 5 ns tWLQZ WRITE Enable Low to Output Hi-Z 50 70 ns tAVWH Address Valid to WRITE Enable High 80 130 ns tAVE1H Address Valid to Chip Enable 1 High 80 130 ns tAVE2L Address Valid to Chip Enable 2 Low 80 130 ns tWHQX WRITE Enable High to Output Transition 10 10 ns |
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