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STE110NS20FD Datasheet(PDF) 1 Page - STMicroelectronics

Part # STE110NS20FD
Description  N-channel 200V - 0.022廓 - 110A - ISOTOP MESH OVERLAY??Power MOSFET
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STE110NS20FD Datasheet(HTML) 1 Page - STMicroelectronics

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May 2006
Rev 3
1/12
12
STE110NS20FD
N-channel 200V - 0.022
Ω - 110A - ISOTOP
MESH OVERLAY™ Power MOSFET
General features
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ ± 20V gate to source voltage rating
■ Low intrinsic capacitance
■ Fast body-drain diode:low trr, Qrr
Description
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of Power MOSFETs with
outstanding performances. The new patented
STrip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(ON) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
Applications
■ Switching application
Internal schematic diagram
Type
VDSS
RDS(on)
ID
STE110NS20FD
200V
<0.024
Ω
110A
ISOTOP
www.st.com
Order codes
Part number
Marking
Package
Packaging
STE110NS20FD
E110NS20FD
ISOTOP
Tube


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