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CRO2AM Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # CRO2AM
Description  LOW POWER USE PLANAR PASSIVATION TYPE
PDF  5 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CRO2AM Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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Feb.1999
MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
102
10–2
100
101
101
7
5
3
2
10–1
7
5
3
2
100
7
5
3
2
7
5
3
2
10–223 5 7
23 5 7
10–1
102
23 5 7
23 5 7
VFGM = 6V
VGT = 0.8V
IGT = 100µA
(Tj = 25°C)
PGM = 0.1W
PG(AV) = 0.01W
VGD = 0.2V
IFGM = 0.1A
23
10–3
5710–2 23 5 710–1 23 5 7 100
200
0
80
100
120
140
160
180
40
60
20
23
100
57 101 23 5 7 102 23 5 7 103
200
160
140
120
60
80
20
0
160
–40 –20
20
80
140
120
40
100
180
060
40
100
# 1
# 2
IGT (25°C)
# 1 32µA
# 2
9µA
TYPICAL EXAMPLE
140
40
–40
–60
–20 0
20
60 80 100 120
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
TYPICAL EXAMPLE
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0
160
–40 –20
20
80
140
120
0.2
0.5
0.9
060
40
100
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
TYPICAL EXAMPLE
DISTRIBUTION
0.8
0.6
0.3
0.2
0.1
0.7
0.5
0.4
0
0.4
0
0.1
0.2
0.3
θ
360°
θ = 30°
60°
120°
90°
180°
RESISTIVE, INDUCTIVE LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TIME (s)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
See
∗3
GATE CHARACTERISTICS



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