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2SC6046 Datasheet(PDF) 1 Page - Isahaya Electronics Corporation |
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2SC6046 Datasheet(HTML) 1 Page - Isahaya Electronics Corporation |
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1 / 4 page  2SC6046 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE ISAHAYA ELECTRONICS CORPORATION DESCRIPTION 2SC6046 is a silicon NPN epitaxial type transistor designed with high collector current, low V CE（sat）. FEATURE ●High collector current I C（MAX）=600mA ●Low collector to emitter saturation voltage V CE（sat）<0.3Vmax(IC=150mA、IB=15mA） APPLICATION For switching application, small type motor drive application. MAXIMUM RATINGS（Ta.=25℃） 記 号 項 目 定 格 値 単 位 V CEO Collector to Emitter voltage 40 V V CBO Collector to Base voltage 75 V V EBO Emitter to Base voltage 6 V I C Collector current 600 mA P C Collector dissipation 200 mW T j Junction temperature +150 ℃ T stg Storage temperature -55∼+150 ℃ ELECTRICAL CHARACTERISTICS（Ta.=25℃） Limits Symbol Parameter Test condition Min Typ Max Unit V （BR）CEO C to E break down voltage IC=1mA、IB=0 40 V V （BR）CBO C to B break down voltage IC=10uA、IE=0 75 V V （BR）EBO E to B break down voltage IE=10uA、IC=0 6 V I CBO Collector cut off current VCB=60V、IE=0 100 nA I EBO Emitter cut off current VEB=3V、IC=0 100 nA h FE DC forward current gain IC=150mA、VCE=10V 100 300 --- V CE（sat） C to E saturation voltage IC=150mA、IB=15mA 0.3 V V BE（sat） B to E saturation voltage IC=150mA、IB=15mA 0.6 1.2 V f T Gain band width product IE=-20mA、VCE=20V、f=100MHz 250 MHz C ob Collector output capacitance VCB=10V、f=1MHz 8 pF OUTLINE DRAWING Unit：mm 0.5 2.5 0.5 1.5 ① ② ③ TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR EIAJ：SC-59 JEDEC：TO-236 Resemblance MARKING B W ・ TypeName |
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