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STB10NA40 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STB10NA40
Description  N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB10NA40 Datasheet(HTML) 1 Page - STMicroelectronics

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STB10NA40
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
n
TYPICAL RDS(on) = 0.46
Ω
n
± 30V GATE TO SOURCE VOLTAGE RATING
n
100% AVALANCHE TESTED
n
REPETITIVE AVALANCHE DATA AT 100
oC
n
LOW INTRINSIC CAPACITANCES
n
GATE CHARGE MINIMIZED
n
REDUCED THRESHOLD VOLTAGE SPREAD
n
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
n
SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
n
SWITCH MODE POWER SUPPLIES (SMPS)
n
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Valu e
Unit
VDS
Drain-source Voltage (VGS = 0)
400
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)
400
V
VGS
Gat e-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc =25
oC10
A
ID
Drain Current (continuous) at Tc =100
oC6.3
A
IDM(
•)
Drain Current (pulsed)
40
A
Ptot
T otal Dissipat ion at Tc =25
oC
125
W
Derating Fact or
1
W/
oC
Tstg
Storage Temperat ure
-65 to 150
oC
Tj
Max. O perat ing Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on )
ID
STB10NA40
400 V
< 0.55
Ω
10 A
October 1995
1 2
3
1
3
I2PAK
TO-262
D2PAK
TO-263
1/10


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