STB16NB25 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STB16NB25

Description	N - CHANNEL 250V - 0.220ohm - 16A - TO-263 PowerMESH] MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STB16NB25

N - CHANNEL 250V - 0.220

Ω - 16A - TO-263

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.220

Ω

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

EXTREMELY HIGH dv/dt CAPABILITY

s

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

s

ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs with

outstanding performances. The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

March 1999

1

3

D

2PAK

TO-263

(suffix ”T4”)

TYPE

VDSS

RDS(on)

ID

ST B16NB25

250 V

< 0.28

Ω

16 A

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

250

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)250

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC16

A

ID

Drain Current (continuous) at Tc = 100

oC10

A

IDM(

•)

Drain Current (pulsed)

64

A

Ptot

T otal Dissipation at Tc =25

oC140

W

Derating Factor

1.12

W /

oC

dv/dt(1)

Peak Diode Recovery voltage slope

5.5

V/ns

Tstg

Storage T emperature

-65 to 150

oC

Tj

Max. Operating Junction Temperat ure

150

oC

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 16A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

1/8

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